| PART |
Description |
Maker |
| MGF7175C 7175C |
From old datasheet system
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| MGF7176C 7176C |
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| S-AU83L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
| S-AU68L |
UHF BAND FM POWER AMPLIFIER MODULE
|
Toshiba Semiconductor
|
| MGF7170AC |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC2643 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| MGF7168C 7168CT_N |
UHF BAND GaAs POWER AMPLIFIER
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF0342A PF0345A PF0341A PF0343A PF0344A |
MOS FET POWER AMPLIFIER MODULE FOR UHF BAND
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3075 EE08687 |
From old datasheet system
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
|
TOSHIBA[Toshiba Semiconductor]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
